VTP9812FH - Si PD, T-1 3/4, 1.5mm2
The VTP9812FH Silicon (Si) Photodiode is designed in an infrared blocking T1 ¾ flat package and provides an excellent response in the visible spectral range. This Si photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
VTP9812FH硅光电二极管是一种快速响应硅光电二极管，其红外阻挡T1¾平面封装包装，具有1.548mm2有源区域，设计用于400nm和700nm之间的光谱响应。
这一系列光电二极管已经设计用于低结电容，以实现快速响应时间，并且可以在反向偏压下操作以降低电容，以进一步提高响应速度。在响应必威平台怎么样速度不关键的应用中，这些光电二极管也可以以光伏模式操作。
特点与优势：
- 靠近人眼的光谱响应
- 1 to 2% linearity over 7 to 9 decades
- 低暗电流
- 高分流抵抗力
- 低电容
- 反应快
- 高反向电压额定值
- 符合rohs
必威平台怎么样应用程序：
- Interior and exterior light control and light switching
- 汽车车灯暗镜
- Display contrast control
- Energy conservation
Active area = 1.548 mm2
短路电流= 100 fc，2850 k的最小0.7μA
暗电流= 10 V反向偏置的最大10 NA
Junction Capacitance = Maximum 150 pF at 10 V Reverse Bias
Spectral Range = 400 nm to 70 0 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.034 A/W
Angular Response = ±50 Degrees at 50% Response
焊接温度=最大260°C
Active area = 1.548 mm2
短路电流= 100 fc，2850 k的最小0.7μA
暗电流= 10 V反向偏置的最大10 NA
Junction Capacitance = Maximum 150 pF at 10 V Reverse Bias
Spectral Range = 400 nm to 70 0 nm
Peak Spectral Response = 580 nm
Sensitivity at peak Wavelength = Typical 0.034 A/W
Angular Response = ±50 Degrees at 50% Response
焊接温度=最大260°C