vt.P1232FH - Si PD, T1 3/4 Flat, 2.326 mm2
The VTP1232FH is a silicon photodiode in a clear end-looking T1¾ flat package. This photodiode provides an enhanced response in the visible and near IR spectral range, as well as exhibits a very high shunt resistance, low dark current and low capacitance.
This fast- response silicon photodiode provides a 2.326 mm2有效区域和400nm和1100nm之间的光谱响应。
Our series of photodiodes are designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode in applications where speed of response is not critical.
These devices have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- 在IR光谱范围附近可见
- 超过7到9年的线性度为1至2％
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- 符合rohs
必威平台怎么样应用程序:
- 烟雾检测
- Barcode scanning
- Light meters
- 脉冲血管计
有源区= 2.326毫米2
短路电流= 100 fc，2850 k的最小21μA
暗电流= 10 V反向偏置的最多25 NA
结电容= 0 V偏置的最大100pf
Spectral Range = 400 nm to 1100 nm
峰值谱响应= 920nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
角度响应= 50％反应下的±70度
有源区= 2.326毫米2
短路电流= 100 fc，2850 k的最小21μA
暗电流= 10 V反向偏置的最多25 NA
结电容= 0 V偏置的最大100pf
Spectral Range = 400 nm to 1100 nm
峰值谱响应= 920nm
Sensitivity at peak Wavelength = Typical 0.60 A/W
角度响应= 50％反应下的±70度