VTP1012H-硅钯，TO-46，1.6mm2
The VTP1012H is a silicon photodiode in a hermetic TO-46 flat window package. With an enhanced response in the visible and near IR spectral range, this photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
The VTP1012H fast-response silicon photodiode provides a 1. 6 mm2有效面积和光谱响应介于400 nm和1150 nm之间。
Our series of fast-response silicon photodiodes are designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response.
These photodiodes can also be operated in photovoltaic mode in applications where speed of response is not critical. These devices have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- 可见到近红外光谱范围
- 7到9年内线性度为1到2%
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- 符合RoHS
必威平台怎么样应用程序:
- 烟雾探测
- Barcode scanning
- Light meters
- 脉搏血氧仪
Active area = 1.6 mm2
Short Circuit Current = Minimum 10 µA at 100 fc, 2850 K
暗电流=50 V反向偏压时最大7 nA
结电容=15 V反向偏置时最大6 pF
Breakdown Voltage = Minimum 50 V
光谱范围=400 nm至1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±35 Degrees at 50 % Response
Active area = 1.6 mm2
Short Circuit Current = Minimum 10 µA at 100 fc, 2850 K
暗电流=50 V反向偏压时最大7 nA
结电容=15 V反向偏置时最大6 pF
Breakdown Voltage = Minimum 50 V
光谱范围=400 nm至1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±35 Degrees at 50 % Response