Excelitas IR Emitting Diodes
part / vte1013h.

VTE1013H-IRED,至-46封装,30mW,光束角±35°

VTE1013H是一个940nm红外发射二极管(IRED),在密封至46封装中。这款机器提供了30兆瓦的输出功率和宽光束角±35°。

这940海里大面积砷化镓芯片w吸引力的特性ith double wirebond for high current CW- and pulsed operation and an operation temperature of -40 to 125 °C.

必威平台怎么样应用程序:

  • 灯障和窗帘
  • 光学开关
  • IR照明
  • 光学通信

Peak wavelength: 940 nm

Total peak power: 30 mW

Half power beam angle: ±35°

CW and pulsed operation

Operating temperature -40 to 125 °C

Peak wavelength: 940 nm

Total peak power: 30 mW

Half power beam angle: ±35°

CW and pulsed operation

Operating temperature -40 to 125 °C

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