This silicon photodiode provdies a 7.41 mm2活动区域designed for a spectral response between 400 nm and 1100 nm.
Our VTD Series are photodiodes which have been used in many applications as replacements for competitive devices. These photodiodes exhibits low dark current under reverse bias and a fast speed of response.
特点与优势：
- IR光谱范围可见
- 峰值波长：925 nm
- Medium size active area
- 低暗电流
- 反应快
- 符合rohs
必威平台怎么样应用程序：
- 硬币柜台
- Automotive
有源区= 7.41毫米2活动区域
Short Circuit Current = Minimum 50 µA at 1000 Lux, 2850 K
Dark Current = Maximum 30 nA at 10 V Reverse Bias
Junction Capacitance = Typical 72 pF at 0V Bias
Rise/Fall time = Typical 20 ns, with 50 Ω load, 5 V Reverse bias, 850 nm
光谱范围= 400nm至1100nm
峰值谱响应= 925nm
峰值波长=典型0.60 A / W的灵敏度
Angular Response = ±60 Degrees at 50 % Response
有源区= 7.41毫米2活动区域
Short Circuit Current = Minimum 50 µA at 1000 Lux, 2850 K
Dark Current = Maximum 30 nA at 10 V Reverse Bias
Junction Capacitance = Typical 72 pF at 0V Bias
Rise/Fall time = Typical 20 ns, with 50 Ω load, 5 V Reverse bias, 850 nm
光谱范围= 400nm至1100nm
峰值谱响应= 925nm
峰值波长=典型0.60 A / W的灵敏度
Angular Response = ±60 Degrees at 50 % Response