VTB6061JH - Si PD, TO-8, 37.7 mm2, Isolated Case
The VTB6061JH is a silicon photodiode in a hermetic TO-8 flat window package where the photodiode chip is isolated from the case. This photodiode provides an enhanced response in the blue spectral range, as well as exhibits a very high shunt resistance and a low dark current.
This blue-enhanced silicon photodiode provides a 37.7 mm2active area with an optimum spectral response between 320 nm and 1100 nm.
This series of P on N Silicon planar photodiodes has been designed for optimum response through the visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They have also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 1%-2% linearity over 7 to 9 decades
- Very low dark current
- Very high shunt resistance
- RoHS compliant
必威平台怎么样应用程序:
- UV and Blue light sensing
- Light meters
- Flame monitoring
- Photometry
Active area = 37.7 mm2
Short Circuit Current = Minimum 260 µA at 100 fc, 2850 K
Dark Current = Maximum 2 nA at 2 V Reverse Bias
Junction Capacitance = Typical 8 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±55 Degrees at 50% Response
Active area = 37.7 mm2
Short Circuit Current = Minimum 260 µA at 100 fc, 2850 K
Dark Current = Maximum 2 nA at 2 V Reverse Bias
Junction Capacitance = Typical 8 nF at 0 V Bias
Spectral Range = 320 nm to 1100 nm
Peak Spectral Response = 920 nm
Sensitivity at peak Wavelength = Typical 0.5 A/W
Angular Response = ±55 Degrees at 50% Response