The VTB6061BH Silicon Photodiode provides a 37.7 mm2active area and is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. This photodiode is designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
特点和优点：
- 可见光谱范围
- 1%-2% linearity over 7 to 9 decades
- 极低暗电流
- 非常高的分流电阻
- 符合RoHS
必威平台怎么样应用：
- Ambient light sensing
- 光度表
- 火焰监测
- Photometry
有效面积=37.7 mm2
短路电流=在100 fc，2850 K时最小26µA
暗电流=2 V反向偏压时最大2 nA
Junction Capacitance = Typical 8 nF at 0 V Bias
Spectral Range = 330 nm to 720 nm
峰值光谱响应=580 nm
灵敏度at peak Wavelength = Typical 0.29 A/W
角响应=±55度，50%响应
有效面积=37.7 mm2
短路电流=在100 fc，2850 K时最小26µA
暗电流=2 V反向偏压时最大2 nA
Junction Capacitance = Typical 8 nF at 0 V Bias
Spectral Range = 330 nm to 720 nm
峰值光谱响应=580 nm
灵敏度at peak Wavelength = Typical 0.29 A/W
角响应=±55度，50%响应