VTB5051UVJH - SI PD，至5,14.8mm2，孤立案例，紫外线窗口
The VTB5051UVJH is a silicon photodiode in a hermetic TO-5 UV enhanced flat window package where the photodiode chip is isolated from the case. This photodiode provides an enhanced response in the UV spectral range, as well as exhibits a very high shunt resistance and a low dark current.
该UV增强型硅光电二极管提供14.8毫米2有源区域，设计用于200nm和1100nm之间的最佳光谱响应。
This series of P on N Silicon planar photodiodes has been designed for optimum response through the UV and visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They have also been designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 超过7到9年的线性1％-2％
- Very low dark current
- Very high shunt resistance
- 符合rohs
必威平台怎么样应用程序:
- UV and Blue light sensing
- Light meters
- 火焰监测
- 测光
Active area = 14.8 mm2
短路电流= 100 fc，2850 k的最小85μA
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
光谱范围= 200nm至1100nm
峰值谱响应= 920nm
峰值波长=典型0.5 A / W的灵敏度
灵敏度在365 nm =典型0.1 a / w
Sensitivity at 220 nm = Minimum 0.038 A/W
角度响应= 50％反应下的±50度
Active area = 14.8 mm2
短路电流= 100 fc，2850 k的最小85μA
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
光谱范围= 200nm至1100nm
峰值谱响应= 920nm
峰值波长=典型0.5 A / W的灵敏度
灵敏度在365 nm =典型0.1 a / w
Sensitivity at 220 nm = Minimum 0.038 A/W
角度响应= 50％反应下的±50度