vt.B5051UVH - Si PD, TO-5, 14.8mm2, UV Window
该VTB5051UVH是密封至-5 uV增强型平板封装中的硅光电二极管。该光电二极管提供UV光谱范围内的增强响应，以及表现出非常高的分流电阻和低暗电流。
该UV增强型硅光电二极管设计在密封至-5平板窗口中，具有14.8毫米2active area and optimum spectral response between 200 nm and 1100 nm.
This series of P on N Silicon planar photodiodes are designed for optimum response through the UV and visible part of the spectrum. These photodiodes are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. They exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits.
Features & Benefits:
- UV to Near IR spectral range
- 超过7到9年的线性1％-2％
- Very low dark current
- Very high shunt resistance
- RoHS compliant
必威平台怎么样应用程序:
- UV and Blue light sensing
- Light meters
- Flame monitoring
- 测光
Active area = 14.8 mm2
短路电流= 100 fc，2850 k的最小85μA
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
光谱范围= 200nm至1100nm
峰值谱响应= 920 nm
峰值波长=典型0.5 A / W的灵敏度
灵敏度在365 nm =典型0.1 a / w
Sensitivity at 220 nm = Minimum 0.038 A/W
角度响应= 50％反应下的±50度
Active area = 14.8 mm2
短路电流= 100 fc，2850 k的最小85μA
Dark Current = Maximum 250 pA at 2 V Reverse Bias
Junction Capacitance = Typical 3 nF at 0 V Bias
光谱范围= 200nm至1100nm
峰值谱响应= 920 nm
峰值波长=典型0.5 A / W的灵敏度
灵敏度在365 nm =典型0.1 a / w
Sensitivity at 220 nm = Minimum 0.038 A/W
角度响应= 50％反应下的±50度