TPG2EW1S09 - 905nm Generation 2 Triple-Cavity 225 µm Plastic PLD
The Excelitas “Generation 2“ pulsed semiconductor laser, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved GaAs structure is offering 85 W pulsed peak power when driven at 30 A. The multi-layer chip design features an emitting area of (225 x 10) μm by emission of three laser lines, offering high output power in a small emitting area. The T1¾ (TO-like) plastic encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or SMD packages and are ideally suited for high volume applications.
该905nm脉冲激光二极管设计成塑料到类似的封装，用于大容量，商用LIDAR和测距仪应用。必威平台怎么样
Excelitas offers a range of 905 nm lasers including multi-cavity monolithic structures with up to four (4) active cavities per chip on generation one devices. Our second generation lasers offer more than 20% increase in optical power at the same drive current. The center wavelength of operation is well-matched to the peak response of our high volume Avalanche Photodiode C30737 Series.
- 905 nm脉冲激光
- PG2EW系列：用于商业应用的塑料必威平台怎么样
- 225μm条纹宽度，查询其他几何形状
- 3个电源斜率
- Multi-cavity lasers with quantum well structure
- Power Drop <20％@ Tmax
- >峰值脉冲功率VS生成1器件增加20％
- 具有优异的温度稳定性
- 905 nm脉冲激光
- PG2EW系列：用于商业应用的塑料必威平台怎么样
- 225μm条纹宽度，查询其他几何形状
- 3个电源斜率
- Multi-cavity lasers with quantum well structure
- Power Drop <20％@ Tmax
- >峰值脉冲功率VS生成1器件增加20％
- 具有优异的温度稳定性