PVGR4S12H - 1550nm Single-Cavity, Quad-Stack 12 mils PLD 9mm CD Packaged
The PVGR4S12H is a metal packaged high efficiency 1550 nm pulsed laser diode, comprised of a quad stack, single cavity chip with a 300 µm stripe width. It provides 58 W @ 40 A tested with a 150 ns wide pulse, and is offered in various other packages.
Our Metal-Organic Chemical Vapour Deposition (MOCVD) grown double heterostructure laser diodes at 1550 nm with peak output powers of 7, 14, and 58 W are offered as standard products. The wavelength of these devices is centered at 1550 nm to take advantage of an increase over AlGaAs and InGaAs lasers in the maximum permitted emission levels for eye-safe operation as per FDA requirements. Class 1 operation therefore should be possible with relatively high output powers.
• 1550 nm center wavelength
• Available stacked devices to increase output power
• Quantum well structure
• High peak pulsed power - up to 50 W
• 1550 nm center wavelength
• Available stacked devices to increase output power
• Quantum well structure
• High peak pulsed power - up to 50 W