C30956EH - Si APD, 3mm, TO-8 Package
The C30956EH Large-area, Long Wavelength, Enhanced Silicon Avalanche Photodiode (Si APD) provides a 3 mm active area diameter with high quantum efficiency at 1060 nm. Designed in a TO-8 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.
Features & Benefits:
- Active diameter 3 mm
- High-quantum efficiency at 1060 nm
- Fast response time
- Wide operating temperature range
- Low capacitance
- Hermetically sealed packages
- RoHS compliant
- TEC option available
必威平台怎么样应用程序:
- Range finding
- LiDAR
- YAG laser detection
Active Area: 7 mm²
Active Diameter: 3 mm
Breakdown Voltage: >325, 400, <500 V
Capacitance: 2.4 pF
Dark Current: 100 nA
Gain: 75
Noise Current: 1.1 pA/√Hz
Package: TO-8
Peak Sensitivity Wavelength: 900 nm
Responsivity:
- 45 A/W at 900 nm
- 25A/W at 1050 nm
- 3.5A/W at 1150 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 2.4 V/°C
Vop范围:275 - 450 V
Wavelength: 400-1100 nm
Active Area: 7 mm²
Active Diameter: 3 mm
Breakdown Voltage: >325, 400, <500 V
Capacitance: 2.4 pF
Dark Current: 100 nA
Gain: 75
Noise Current: 1.1 pA/√Hz
Package: TO-8
Peak Sensitivity Wavelength: 900 nm
Responsivity:
- 45 A/W at 900 nm
- 25A/W at 1050 nm
- 3.5A/W at 1150 nm
Rise/Fall Time: 2 ns
Temperature Coefficient: 2.4 V/°C
Vop范围:275 - 450 V
Wavelength: 400-1100 nm