900 nm enhanced without undesirable properties."> C30955EH - Si APD, 1.5mm, TO-5 Package | Excelitas - 必威188体育,betway网页登录,必威平台怎么样
Excelitas C30955EH Silicon APD
PART/ C30955EH

C30955EH - Si APD, 1.5mm, TO-5 Package

The C30955EH Long-Wavelength, Enhanced Silicon Avalanche Photodiode (APD) provides a 1.5 mm active area diameter and high quantum efficiency at 1060 nm. Designed in a TO-5 package, this Si APD is made using a double-diffused "reach-through" structure. Its long-wave response of >900 nm has been enhanced without introducing any undesirable properties.

Features & Benefits:

  • Active diameter 1.5 mm
  • 1060nm的高量子效率
  • 快速响应时间
  • Wide operating temperature range
  • Low capacitance
  • Hermetically sealed packages
  • RoHS compliant
  • TEC option available

必威平台怎么样应用程序:

  • 范围发现
  • LiDAR
  • YAG laser detection

活动面积:1.77mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
电容:3PF.
Dark Current: 100nA
Gain: 100
Noise Current: 1 pA/√Hz
包裹:到5
Peak Sensitivity Wavelength: 900 nm
响应性:

  • 70 A/W at 900 nm,
  • 34 A/W at 1050 nm,
  • 在1150nm处5 a / w

上升/下降时间:2ns
温度系数:2.4 V /°C
Vop范围:275 - 450 V
Wavelength: 400-1100 nm

活动面积:1.77mm²
Active Diameter: 1.5 mm
Breakdown Voltage: >315, 390, <490 V
电容:3PF.
Dark Current: 100nA
Gain: 100
Noise Current: 1 pA/√Hz
包裹:到5
Peak Sensitivity Wavelength: 900 nm
响应性:

  • 70 A/W at 900 nm,
  • 34 A/W at 1050 nm,
  • 在1150nm处5 a / w

上升/下降时间:2ns
温度系数:2.4 V /°C
Vop范围:275 - 450 V
Wavelength: 400-1100 nm

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