C30927EH-03 - SI APD象限 - 1.5mm - 800nm
The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
象限雪崩光电二极管可用于各种跟踪和对准应用。必威平台怎么样
主要特点:
- 完全照明的光敏表面的全角度大于90º
- 高量子效率优化800 nm操作
- Fast Time Response
- 大型活跃面积：1.77mm²
- 密封的低轮廓至-8包装
必威平台怎么样应用程序：
- 追踪
- 结盟
- "Friend or Foe" identification
击穿电压范围（v）：350至485
Typical breakdown voltage (V): 425
典型增益（m）：100
Typical Temperature Coefficient for constant gain (V/℃): 2.4
800 nm（a / w）的最小响应度：45
800nm（a / w）的典型响应度：55
典型的总暗电流(nA): 100
Maximal total dark current (nA): 200
Typical noise current per element (pA/√Hz): 1.0
Maximal noise current per element (pA/√Hz): 1.5
Typical capacitance total of all quadrants (pF): 3
所有象限的最大电容（PF）：5
Maximal series resistance (Ω): 15
典型的上升和下降时间（NS）：3
储存温度（℃）：-60至120
Operating temperature (℃): -40 to 60
击穿电压范围（v）：350至485
Typical breakdown voltage (V): 425
典型增益（m）：100
Typical Temperature Coefficient for constant gain (V/℃): 2.4
800 nm（a / w）的最小响应度：45
800nm（a / w）的典型响应度：55
典型的总暗电流(nA): 100
Maximal total dark current (nA): 200
Typical noise current per element (pA/√Hz): 1.0
Maximal noise current per element (pA/√Hz): 1.5
Typical capacitance total of all quadrants (pF): 3
所有象限的最大电容（PF）：5
Maximal series resistance (Ω): 15
典型的上升和下降时间（NS）：3
储存温度（℃）：-60至120
Operating temperature (℃): -40 to 60