excelitas.C30902BH Silicon APD
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C30902BH - SI APD,0.5mm,18个球镜头

The C30902BH High-Performance Silicon Avalanche Photodiode (Si APD) provides a 0.5 mm active area diameter. Suitable for biomedical and analytical applications, this Si APD is designed with a double-diffused “reach-through” structure to provide high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

该设备的响应性与高达约800 MHz的调制频率无关。探测器芯片在改进的至18个封装中密封在球透镜后面。

Features & Benefits:

  • 0.5毫米SI APD到18个外壳
  • High-quantum efficiency
  • 77% typical at 830 nm
  • 室温下噪音
  • High responsivity – internal avalanche gains >150
  • 光谱响应范围 - 400至1000nm
  • 时间响应 - 通常为0.5 ns
  • 宽工作温度范围-40°C至+ 70°C
  • Built-in TE-cooler option
  • Various optical input options

必威平台怎么样应用程序:

  • LiDAR
  • 范围发现
  • Small-signal fluorescence
  • Photon counting
  • Bar code scanning


Active Area: 0.2 mm²
Active Diameter: 0.5 mm
击穿电压:225 V
电容:1.6 PF
Dark Current: 15 nA
Gain: 150
噪声电流:0.23 PA /√Hz
包装:到18,平面窗口
Peak Sensitivity Wavelength: 830 nm
响应时间:
响应性:

  • 77 A/W at 830 nm
  • 65 A/W at 900 nm,

上升/下降时间:0.5 ns
温度系数:0.7V /°C
Wavelength: 400-1100 nm

Active Area: 0.2 mm²
Active Diameter: 0.5 mm
击穿电压:225 V
电容:1.6 PF
Dark Current: 15 nA
Gain: 150
噪声电流:0.23 PA /√Hz
包装:到18,平面窗口
Peak Sensitivity Wavelength: 830 nm
响应时间:
响应性:

  • 77 A/W at 830 nm
  • 65 A/W at 900 nm,

上升/下降时间:0.5 ns
温度系数:0.7V /°C
Wavelength: 400-1100 nm

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