PART/ C30884EH
C30884EH - SI APD，1mm，至-5
The C30884EH Silicon Avalanche Photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.
C30884EH在改进的低型至5包装中的平板玻璃窗口后面密封。
必威平台怎么样应用程序:
- 光通信
- Laser Range Finding
- 高速开关系统
High Quantum Efficiency:
- 85% typical at 900 nm
- 10％典型为1060 nm
Spectral Response Range– (10% Points) 400 to 1100 nm
Fast Time Response:
- Rise time: 1 ns
- 下降时间：1 ns
宽工作温度范围：-40°C至70°C
密封的低调到-5包装
High Quantum Efficiency:
- 85% typical at 900 nm
- 10％典型为1060 nm
Spectral Response Range– (10% Points) 400 to 1100 nm
Fast Time Response:
- Rise time: 1 ns
- 下降时间：1 ns
宽工作温度范围：-40°C至70°C
密封的低调到-5包装