C30845EH - Si PIN - 8mm- TO-8, Quadrant
The C30845EH is a high quality N-type Silicon PIN quadrant photodiode in a hermetically sealed TO-8 package, designed for the 300 to 1100 nm wavelength range. Because of the large area (50 mm²), the device is useful in obtaining position information from both focused and defocused spots in either pulsed or CW mode.
Features:
- Large Photosensitive Surface Area of 50 mm²
- 45 V的低工作电压（Vop）
- Hermetically Sealed Packages
- 光谱响应范围–400至1100 nm
- 极低象限间隔–0.25 mm
Active diameter (mm): 8
Active area (mm²): 50
Minimal Breakdown Voltage (V): 100
每个元件的典型电容（pF）：8
每个元件的最大电容（pF）：10
Typical dark current per element at 10 V per element (nA): 70
每个元件10V时的最大暗电流（nA）：200
Typical dark current per element at 45 V per element (nA): 200
每个元素最大的暗电流at 45 V per element (nA): 700
Typical noise current per element at 900 nm (pA/√Hz): 0.43
900 nm时每个元件的最大噪声电流（pA/√Hz）：1.80
1060 nm（pA/√Hz）下每个元件的典型噪声电流：1.5
Maximal noise current per element at 1060 nm (pA/√Hz): 6.5
Typical rise time (ns): 6
典型下降时间（ns）：10
Storage temperature (℃): -60 to 100
工作温度（℃）：-40至80
Active diameter (mm): 8
Active area (mm²): 50
Minimal Breakdown Voltage (V): 100
每个元件的典型电容（pF）：8
每个元件的最大电容（pF）：10
Typical dark current per element at 10 V per element (nA): 70
每个元件10V时的最大暗电流（nA）：200
Typical dark current per element at 45 V per element (nA): 200
每个元素最大的暗电流at 45 V per element (nA): 700
Typical noise current per element at 900 nm (pA/√Hz): 0.43
900 nm时每个元件的最大噪声电流（pA/√Hz）：1.80
1060 nm（pA/√Hz）下每个元件的典型噪声电流：1.5
Maximal noise current per element at 1060 nm (pA/√Hz): 6.5
Typical rise time (ns): 6
典型下降时间（ns）：10
Storage temperature (℃): -60 to 100
工作温度（℃）：-40至80