Excelitas C39737LH Silicon APD in LCC package
PART/ C30737LH-500-83N

C30737LH-500-83N - Si APD, 500um, LCC, 650nm filter, 800nm enhanced

The C30737LH-500-83N Silicon Avalanche Photodiode (Si APD) provides an active diameter of 500µm with enhanced 800nm response and 650 nm optical bandpass in a leadless ceramic carrier (LCC).

主要特征:

  • 高响应度在650nm处过滤
  • Low noise and extremely fast rise time at all wavelengths with a frequency response above 1.3 GHz
  • 主动直径为230μm,优化800nm
  • Optical bandpass filter at 650nm
  • Leadless ceramic carrier option "LH"

必威平台怎么样应用程序:

  • LiDAR
  • Laser-range finding
  • 安全扫描
  • Applications requiring a low-cost, high-performing detector

Active Diameter: 500μm
峰灵敏度波长:650 nm
Breakdown Voltage Vbd: 120-210 (binning available)
VOP温度系数M:0.5 V /°C
收益:100 @ 650 nm
Responsivity: 35 A/W at 650 nm
Dark Current Id: 0.1 <1 nA
噪声电流:0.1 PA /√Hz
Capacitance: 2 pF
上升/下降时间:0.3 ns r load =50Ω
Cut-off Frequency: 1.3 GHz
存储温度:-50°C至+ 100°C
操作温度:-40°C至+ 85°C
包装:3x3mm玻璃窗,无铅陶瓷载体(LCC)
窗口:650 nm滤波器

Active Diameter: 500μm
峰灵敏度波长:650 nm
Breakdown Voltage Vbd: 120-210 (binning available)
VOP温度系数M:0.5 V /°C
收益:100 @ 650 nm
Responsivity: 35 A/W at 650 nm
Dark Current Id: 0.1 <1 nA
噪声电流:0.1 PA /√Hz
Capacitance: 2 pF
上升/下降时间:0.3 ns r load =50Ω
Cut-off Frequency: 1.3 GHz
存储温度:-50°C至+ 100°C
操作温度:-40°C至+ 85°C
包装:3x3mm玻璃窗,无铅陶瓷载体(LCC)
窗口:650 nm滤波器

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