APD Quadrants

The C30927EH-01 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure.

The C30927EH-02 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-02 is optimized for operating at 900 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.

The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.