Excelitas Ingaas APD C30662在陶瓷载体中
PART/ C30662ECERH-1

C30662ECERH-1 - Ingaas APD,200um,陶瓷

The C30662ECERH-1 Large-area InGaAs Avalanche Photodiode (APD) provides a 200 µm active diameter in ceramic submount carrier with a Delta Vbd-Vop > 4V.

Excelitas C30662Ecerh-1 APD针对1550nm的波长进行了优化,适用于眼睛安全激光测距系统。

Features & Benefits:

  • Large-area InGaAs APD 200 µm diameter
  • Ceramic submount carrier
  • 光谱响应1000至1700nm
  • Low noise and dark current
  • 高增益和量子效率
  • Selected for Delta-V > 4v
  • Bandwidth over 850 MHz
  • 可用于满足特定需求的自定义修改

必威平台怎么样应用程序:

  • 激光范围查找,扫描和视频成像
  • 光学和自由空间通信
  • Scanning and video imaging
  • 光学和自由空间通信spectrophotometers and reflectometry

主动直径:200μm
击穿电压:40-70 V
VBD-VOP:> 4V
温度系数:0.14 V /°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
收获:20
Package: 2x4mm ceramic submount carrier

主动直径:200μm
击穿电压:40-70 V
VBD-VOP:> 4V
温度系数:0.14 V /°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 45 nA
Spectral Noise Current: 0.7 pA/√Hz
Capacitance: 2.5 pF
Bandwidth: 850 MHz
Quantum Efficiency: 75% @1300-1550 nm
收获:20
Package: 2x4mm ceramic submount carrier

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