C30659-1060E-R8BH-Si APD接收机，0.8mm，至-8，200MHz，高损伤阈值
The C30659 Series includes a Silicon (Si) or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. Our C30659-1060E-R8BH device has a C30954EH Si APD optimized at 1060nm and a 0.8 mm active diameter.
C30659系列采用反相放大器设计，发射极跟随器用作输出缓冲级。
The Si APDs used in these devices are the same as used in the Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than our standard C30950 Series.
- 系统带宽：200MHz
- 超低噪声等效功率（NEP）
- 55 fW /√赫兹在900海里
- 1064nm时为100fw/√Hz
- 光谱响应范围：400至1100 nm，优化波长为1060 nm
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封TO-8包装
- High reliability
- 系统带宽：200MHz
- 超低噪声等效功率（NEP）
- 55 fW /√赫兹在900海里
- 1064nm时为100fw/√Hz
- 光谱响应范围：400至1100 nm，优化波长为1060 nm
- Typical power consumption: 150 mW
- ±5 V amplifier operating voltages
- 50 Ω AC load capability (AC-Coupled)
- 密封TO-8包装
- High reliability