Excelitas C30645 Ingaas APD在陶瓷载体和小孔径中
PART/ C30645EH

C30645EH - InGaAs APD, 80um, TO-18 Low-Profile

The C30645EH Large-Area InGaAs Avalanche Photodiode provides an 80 µm active diameter in hermetic TO-18 package and small aperture silicon window.

The Excelitas C30645EH is optimized for the wavelength of 1550 nm and suitable for use in eye-safe laser range finding systems.

Features & Benefits:

  • 大面积IngaAs APD直径80μm
  • Hermetic TO-18 package; Small aperture silicon
  • 光谱响应1100至1700nm
  • Low noise and dark current
  • 高增益和量子效率
  • 带宽超过1000 MHz
  • 可用于满足特定需求的自定义修改

必威平台怎么样应用程序:

  • 激光范围查找,扫描和视频成像
  • 光学和自由空间通信
  • Scanning and video imaging
  • 光学和自由空间通信spectrophotometers and reflectometry

Active Diameter: 80 µm
击穿电压:40-70 V
温度系数:0.14 V /°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
收获:20
Package: TO-18
窗口孔径:小0.8毫米
窗口类型:硅块可见光<1100 nm

Active Diameter: 80 µm
击穿电压:40-70 V
温度系数:0.14 V /°C
Responsivity: 9.3 A/W @ 1550 nm
Dark Current: 3 nA
Spectral Noise Current: 0.2 pA/√Hz
Capacitance: 1.25 pF
Bandwidth: 1000 MHz
Quantum Efficiency: 75% @1300-1550 nm
收获:20
Package: TO-18
窗口孔径:小0.8毫米
窗口类型:硅块可见光<1100 nm

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