InGaAs PIN Photodiodes

C30617ECERH是高速IngaAs销光电二极管，在矩形陶瓷载体上具有100μm的有源区域的直径。该光电二极管从800nm到1700nm提供高量子效率。它具有低电容，用于扩展带宽，以及高灵敏度高线性度和探测器有源区域的百分比内的均匀性高。

The C30618ECERH is a high-speed InGaAs PIN Photodiode with 350 µm diameter of active area on a rectangular ceramic carrier. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30617BH is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in TO-18 ball lens package. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30617BFCH is a high-speed InGaAs PIN Photodiode with a 100µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30618BFCH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within 2% across the detector active area.

The C30618GH is a high-speed InGaAs PIN Photodiode with a 350 µm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

The C30619GH is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30641GH is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

C30642GH是一个大面积IngaAs销光电二极管，具有2.0 mm的有源直径芯片，进入-5封装和平面玻璃窗。该光电二极管从800nm到1700nm提供高量子效率。它具有高响应度，高分流电阻，低暗电流，低电容，在探测器有源区域的两个百分点内快速响应时间和均匀性。

C30665GH是大面积InGaAs PIN光电二极管with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within 2% across the detector active area.

The C30723GH is a large-area InGaAs PIN Photodiode with a 5.0 mm active diameter chip in a TO-8 package and flat glass window. This photodidoe provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast response time and uniformity within two percent across the detector active area.

The C30617L-100 is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in a ceramic SMD package with window. This photodiode provides high quantum efficiency from 960 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high linearity and uniformity within two percent across the detector active area.

C30618L-350是高速IngaAs销光电二极管，其具有350μm有源直径芯片，其中陶瓷SMD封装有窗口。该光电二极管从960nm到1700nm提供高量子效率。它具有用于扩展带宽的低电容，以及在探测器有源区域的两个百分比内的高灵敏度，高线性度和均匀性的高电阻。

The C30619GH-LC is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30641GH-LC is a large-area InGaAs PIN Photodiode with a 1.0 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30642GH-LC is a large-area InGaAs PIN Photodiode with a 2.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.

The C30665GH-LC is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features a special ultra-low capacitance of only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth, high responsivity, high shunt resistance and low dark current. Typical devices feature less than 1% non-linearity and uniformity within 2% across the detector active area.