硅销光电二极管

The C30807EH is a high quality N-type Silicon PIN Photodiode with a 1.0 mm active diameter chip in a hermetically-sealed TO-18 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².

C30845EH是一种高质量的N型硅销象限光电二极管，其在气密密封到-8封装中，设计用于300至1100nm波长范围。由于大面积（50mm²），该装置可用于从脉冲或CW模式中获得来自聚焦和散焦点的位置信息。

The C30808EH is a Silicon PIN Photodiode with a 2.5 mm active diameter chip in a hermetically sealed TO-5 package designed for the 300 to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².

The C30822EH is a Silicon PIN Photodiode with a 5.0 mm active diameter chip in a hermetically-sealed TO-8 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².

FFD-100H是一个大面积硅销光电二极管，其在气密密封至5包装中具有2.5mm的有源直径。该光电二极管从400nm至1150nm产生高响应率，在920nm处具有峰值响应度。它具有超快速上升和下降时间，低NEP和低工作电压。

FFD-200H是一个大区域硅销光电二极管，在气密密封至-8个包装中，具有5.0mm的有源直径。该光电二极管从400nm至1150nm提供高响应度，在850nm处具有峰值响应度。它还具有超快速上升和下降时间，低NEP和低工作电压。

The FND-100GH is a Large-Area Silicon PIN photodiode with a 2.5 mm active diameter in a hermetically-sealed TO-5 package with a glass window. This photodiode provides high responsivity from 400 nm to 1150 nm, with a peak responsivity at 920 nm. It also features an ultra-fast rise and fall time, low NEP and low operating voltage.

The FND-100QH is a large-area Silicon PIN photodiode with a 2.5 mm active diameter in a hermetically-sealed TO-5 package with a quartz window. This photodiode provides high responsivity from 200 nm to 1150 nm, with a peak responsivity at 920 nm. The FND-100QH has a quartz window, extending the photodiode’s UV response down to 200 nm. It also features an ultra-fast rise and fall time, low NEP and low operating voltage.

HUV-1100BGH是一种UV增强的大型硅引脚放大器模块，具有2.5mm的主动直径芯片，用于封装，为250nm至1150nm波长范围设计。HUV-1100光电二极管使用外部反馈电阻进行带宽灵活性。

The HUV-2000BH is a UV-enhanced Silicon PIN Amplifier Module with a 5.5 mm active diameter chip in a hermetic TO package and designed for the 250 nm to 1150 nm wavelength range.

The UV-215BGH/340 is a UV-Enhanced Silicon PIN Photodiode with a 5.5 mm active diameter chip in a hermetically-sealed TO-8 package. This photodiode is designed for the 250 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

The UV-040BQH is a UV-enhanced Silicon PIN Photodiode with a 1.0 mm active diameter chip in a hermetically-sealed TO-5 package This photodiode is designed for the 250 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

The UV-100BQH is a UV-enhanced Silicon PIN Photodiode with a 2.5 mm active diameter chip in a hermetically-sealed TO-5 package. This photodiode is designed for the 250 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

UV-215BQH是UV增强型硅销光电二极管，其具有5.5mm有源直径芯片N，气密密封至-8封装。该光电二极管设计用于185nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

The UV-245BGH is a high-quality, UV-enhanced Silicon PIN Photodiode with a 4.4 mm x 4.7 mm active area chip in a hermetically-sealed TO-5 package. This photodiode is designed for the 250 nm to 1150 nm wavelength range with a peak sensitivity at 900 nm. It also features low noise, a wide spectral range and linearity over a wide dynamic range.

该UV-245BQH是一种UV增强型硅销光电二极管，其具有4.4mm×4.7mm的有源区域芯片，在气密密封到-5封装。该光电二极管设计用于185nm至1150nm波长范围，峰值灵敏度为900nm。它还具有低噪声，宽度范围和线性度在宽动态范围内。

The C30741PH-15S is a high-speed Silicon PIN photodiode with a 1.5 x 1.5 mm active area chip in a T 1¾ clear plastic package.

C30741PFH-15S是一种高速硅销光电二极管，具有1.5×1.5mm有源区芯片，在T1°可见塑料包装中。